NSN 5961-00-023-2924 Semiconductor Devic, Semiconductor Device Diode manufactured by L 3 Communications, Raytheon Company, Microsemi Corp Scottsdale, Freescale Semiconductor Inc, Electronic Industries Inc is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 076010130, 1N1315. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5961-00-023-2924 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5961-00-023-2924 part today and allow us to simplify your procurement process.
Alternative NSN: 5961-00-023-2924 |
Item Name:Semiconductor Devic |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NCB Code: USA (00) |
Manufacturers: L 3 Communications , Raytheon Company , Microsemi Corp Scottsdale , Freescale Semiconductor Inc , Electronic Industries Inc , N A P Smd Technology Inc , Rockwell Collins Inc |
L 3 Communications | Raytheon Company | Microsemi Corp Scottsdale |
Freescale Semiconductor Inc | Electronic Industries Inc | N A P Smd Technology Inc |
Rockwell Collins Inc |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
076010130 | L 3 Communications | semiconductor devic | Avl | RFQ |
076010130 | Raytheon Company | semiconductor device diode | Avl | RFQ |
076010130 | Microsemi Corp Scottsdale | semiconductor device diode | Avl | RFQ |
1N1315 | Raytheon Company | semiconductor device diode | Avl | RFQ |
1N1315 | Microsemi Corp Scottsdale | semiconductor device diode | Avl | RFQ |
1N1315 | Freescale Semiconductor Inc | semiconductor device diode | Avl | RFQ |
1N1315 | L 3 Communications | semiconductor devic | Avl | RFQ |
1N1315A | L 3 Communications | semiconductor device diode | Avl | RFQ |
1N1315A | Electronic Industries Inc | semiconductor device diode | Avl | RFQ |
1N1315A | Freescale Semiconductor Inc | semiconductor device diode | Avl | RFQ |
1N1315A | N A P Smd Technology Inc | semiconductor device diode | Avl | RFQ |
1N1315A | Microsemi Corp Scottsdale | semiconductor device diode | Avl | RFQ |
1N1315A | Raytheon Company | semiconductor device diode | Avl | RFQ |
353-2521-000 | Rockwell Collins Inc | semiconductor device diode | Avl | RFQ |
353-2521-000 | Microsemi Corp Scottsdale | semiconductor device diode | Avl | RFQ |
353-2521-000 | Raytheon Company | semiconductor device diode | Avl | RFQ |
353-2521-000 | L 3 Communications | semiconductor devic | Avl | RFQ |
353-2845-000 | L 3 Communications | semiconductor devic | Avl | RFQ |
353-2845-000 | Raytheon Company | semiconductor device diode | Avl | RFQ |
353-2845-000 | Microsemi Corp Scottsdale | semiconductor device diode | Avl | RFQ |
353-2845-000 | Rockwell Collins Inc | semiconductor device diode | Avl | RFQ |
RELEASE 3139 | Raytheon Company | semiconductor device diode | Avl | RFQ |
RELEASE 3139 | Microsemi Corp Scottsdale | semiconductor device diode | Avl | RFQ |
RELEASE 3139 | L 3 Communications | semiconductor devic | Avl | RFQ |
RELEASE 3139 | Electronic Industries Inc | semiconductor device diode | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.125 INCHES NOMINAL |
ADAV | OVERALL DIAMETER | 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.7 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MICROAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE 3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
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