NSN 5962-01-214-0932 Microcircuit Memory manufactured by Burndy Llc, Dla Land And Maritime is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 5805171P11, 5805171T11, 5807811P33, ROM PROM FAMILY 013. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-214-0932 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-214-0932 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-214-0932 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: Burndy Llc , Dla Land And Maritime |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
5805171P11 | Burndy Llc | microcircuit memory | Avl | RFQ |
5805171T11 | Burndy Llc | microcircuit memory | Avl | RFQ |
5807811P33 | Burndy Llc | microcircuit memory | Avl | RFQ |
ROM PROM FAMILY 013 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANSLR-16A |
MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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