NSN 5962-01-245-3441 Microcircuit Memory manufactured by Sgs Thomson Microelectronics, Integrated Device Technology Inc, General Dynamics Land Systems Inc, Fairchild Semiconductor Corporation is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including IMS1600S-70M, IDT7187L70CB, 7567652-002, 1601DMQB70. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-245-3441 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-245-3441 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-245-3441 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: Sgs Thomson Microelectronics , Integrated Device Technology Inc , General Dynamics Land Systems Inc , Fairchild Semiconductor Corporation |
Sgs Thomson Microelectronics | Integrated Device Technology Inc | General Dynamics Land Systems Inc |
Fairchild Semiconductor Corporation |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
IMS1600S-70M | Sgs Thomson Microelectronics | microcircuit memory | Avl | RFQ |
IDT7187L70CB | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
7567652-002 | General Dynamics Land Systems Inc | microcircuit memory | Avl | RFQ |
1601DMQB70 | Fairchild Semiconductor Corporation | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
CZEQ | Time Rating Per Chacteristic | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | Memory Device Type | RAM |
AFJQ | Storage Temp Range | -65.0/+150.0 DEG CELSIUS |
CQZP | Input Circuit Pattern | 19 INPUT |
CBBL | Features Provided | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HIGH RELIABILITY AND W/ENABLE |
CQSJ | Inclosure Material | CERAMIC |
ADAT | Body Width | 0.310 INCHES MAXIMUM |
TTQY | Terminal Type And Quantity | 22 PRINTED CIRCUIT |
CWSG | Terminal Surface Treatment | SOLDER |
ADAQ | Body Length | 1.111 INCHES MAXIMUM |
AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
ADAU | Body Height | 0.180 INCHES MAXIMUM |
TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
MRC | Decoded Requirement | Clear Text Reply |
CQSZ | Inclosure Configuration | DUAL-IN-LINE |
AFGA | Operating Temp Range | -55.0/+125.0 DEG CELSIUS |
CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | Voltage Rating And Type Per Characteristic | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZZZ | Memory Capacity | UNKNOWN |
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