NSN 5962-01-302-0502 Microcircuit Memory manufactured by Dla Land And Maritime, Cypress Semiconductor Corporation, Integrated Device Technology Inc is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 5962-8403611B3A, 5962-8403611B3B, 5962-8403611B3X. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-302-0502 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-302-0502 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-302-0502 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: Dla Land And Maritime , Cypress Semiconductor Corporation , Integrated Device Technology Inc |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
5962-8403611B3A | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
5962-8403611B3A | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
5962-8403611B3A | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
5962-8403611B3B | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
5962-8403611B3X | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
5962-8403611B3X | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
5962-8403611B3X | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
84036 | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
84036 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
84036 | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
84036113A | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
84036113A | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
84036113A | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
84036113B | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
84036113X | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
CY6116-55LMB | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
CY6116-55LMB | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
CY6116-55LMB | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
IDT6116SA55L28B | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CRHL | BIT QUANTITY16384 |
MEMORY | CSWJ | WORD QUANTITY2048 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
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