NSN 5961-00-226-8581 Transistor manufactured by Bei Sensors And Systems Co Inc, Joint Electron Device Engineering, Raytheon Company, Hewlett Packard Co, Semiconductor Technology Inc is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 14000, 1850-0099. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5961-00-226-8581 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5961-00-226-8581 part today and allow us to simplify your procurement process.
Alternative NSN: 5961-00-226-8581 |
Item Name:Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NCB Code: USA (00) |
Manufacturers: Bei Sensors And Systems Co Inc , Joint Electron Device Engineering , Raytheon Company , Hewlett Packard Co , Semiconductor Technology Inc , Eca Etablissement Central Des , Inspektorat Wsparcia Sil Zbrojnych , Optex Systems Inc |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
14000 | Bei Sensors And Systems Co Inc | transistor | Avl | RFQ |
14000 | Joint Electron Device Engineering | transistor | Avl | RFQ |
14000 | Raytheon Company | transistor | Avl | RFQ |
1850-0099 | Raytheon Company | transistor | Avl | RFQ |
1850-0099 | Hewlett Packard Co | transistor | Avl | RFQ |
1850-0099 | Joint Electron Device Engineering | transistor | Avl | RFQ |
2N964 | Joint Electron Device Engineering | transistor | Avl | RFQ |
2N964 | Semiconductor Technology Inc | transistor | Avl | RFQ |
2N964 | Raytheon Company | transistor | Avl | RFQ |
4192800-118 | Raytheon Company | transistor | Avl | RFQ |
4192800-118 | Joint Electron Device Engineering | transistor | Avl | RFQ |
5961002268581 | Eca Etablissement Central Des | transistor | Avl | RFQ |
5961PL0981240 | Inspektorat Wsparcia Sil Zbrojnych | transistor | Avl | RFQ |
89020-015 | Optex Systems Inc | transistor | Avl | RFQ |
JAN2N964 | Raytheon Company | transistor | Avl | RFQ |
JAN2N964 | Joint Electron Device Engineering | transistor | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | GERMANIUM |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND -2.5 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/258 GOVERNMENT SPECIFICATION |
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