NSN 5962-01-092-4618 Microcircuit Memory manufactured by Intel Corporation, Ge Aviations Systems Llc, Stmicroelectronics Inc, Fairchild Semiconductor Corporation, Unisys Corporation is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 2104(S1234, 348-2300-176-20, 4096-16, 4096-DC, 49A0295-000. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-092-4618 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-092-4618 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-092-4618 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: Intel Corporation , Ge Aviations Systems Llc , Stmicroelectronics Inc , Fairchild Semiconductor Corporation , Unisys Corporation , Raytheon Company , Dla Land And Maritime , Freescale Semiconductor Inc , Now Electronics Inc , Leidos Inc |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
2104(S1234 | Intel Corporation | microcircuit memory | Avl | RFQ |
348-2300-176-20 | Ge Aviations Systems Llc | microcircuit memory | Avl | RFQ |
4096-16 | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
4096-DC | Fairchild Semiconductor Corporation | microcircuit memory | Avl | RFQ |
49A0295-000 | Unisys Corporation | microcircuit memory | Avl | RFQ |
911724-1 | Raytheon Company | microcircuit memory | Avl | RFQ |
911724-1 | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
911724-1 | Intel Corporation | microcircuit memory | Avl | RFQ |
9S6033-160 | Intel Corporation | microcircuit memory | Avl | RFQ |
9S6033-160 | Raytheon Company | microcircuit memory | Avl | RFQ |
9S6033-160 | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
C2104-2 | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
C2104-2 | Raytheon Company | microcircuit memory | Avl | RFQ |
C2104-2 | Intel Corporation | microcircuit memory | Avl | RFQ |
DMS 84112 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
MCM4027L25BEBD | Freescale Semiconductor Inc | microcircuit memory | Avl | RFQ |
MD2104A | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
MD2104A | Raytheon Company | microcircuit memory | Avl | RFQ |
MD2104A | Intel Corporation | microcircuit memory | Avl | RFQ |
MK4027J-3MIL | Now Electronics Inc | microcircuit memory | Avl | RFQ |
MK4027J-3MIL | Leidos Inc | microcircuit memory | Avl | RFQ |
MK4027J-3MIL | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
MKB4027J 84 | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
MKB4027J83 | Raytheon Company | microcircuit memory | Avl | RFQ |
MKB4027J83 | Intel Corporation | microcircuit memory | Avl | RFQ |
MKB4027J83 | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
MKB4027P-84 | Stmicroelectronics Inc | microcircuit memory | Avl | RFQ |
W4900491-000 | Unisys Corporation | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.740 INCHES MINIMUM AND 0.780 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND W/ENABLE AND W/STORAGE AND HIGH SPEED AND POSITIVE OUTPUTS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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