NSN 5962-01-111-7481 Microcircuit Memory, Microcircuit Digital manufactured by Raytheon Company, Dla Land And Maritime is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 45708-1, 722906-50, ROM PROM FAMILY 008. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-111-7481 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-111-7481 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-111-7481 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: Raytheon Company , Dla Land And Maritime |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
45708-1 | Raytheon Company | microcircuit memory | Avl | RFQ |
45708-1 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
722906-50 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
722906-50 | Raytheon Company | microcircuit memory | Avl | RFQ |
ROM PROM FAMILY 008 | Raytheon Company | microcircuit digital | Avl | RFQ |
ROM PROM FAMILY 008 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING500 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-0 075 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CRHL | BIT QUANTITY2048 |
MEMORY | CSWJ | WORD QUANTITY512 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC70 00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT05869-726009-1 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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