NSN 5962-01-159-7882 Microcircuit Memory manufactured by National Semiconductor Corp, Dla Land And Maritime, Bae Systems Information And Electronic Systems Integration Inc, Syntegra Usa Inc, Mmi Amd is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 332962-1, 5187079. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-159-7882 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-159-7882 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-159-7882 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: National Semiconductor Corp , Dla Land And Maritime , Bae Systems Information And Electronic Systems Integration Inc , Syntegra Usa Inc , Mmi Amd , Watkins Johnson Co , Intersil Corporation |
National Semiconductor Corp | Dla Land And Maritime | Bae Systems Information And Electronic Systems Integration Inc |
Syntegra Usa Inc | Mmi Amd | Watkins Johnson Co |
Intersil Corporation |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
332962-1 | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
332962-1 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
332962-1 | Bae Systems Information And Electronic Systems Integration Inc | microcircuit memory | Avl | RFQ |
332962-1 | Syntegra Usa Inc | microcircuit memory | Avl | RFQ |
5187079 | Syntegra Usa Inc | microcircuit memory | Avl | RFQ |
5187079 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
5187079 | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
5300-1J | Mmi Amd | microcircuit memory | Avl | RFQ |
5300J | Mmi Amd | microcircuit memory | Avl | RFQ |
708218-001 | Watkins Johnson Co | microcircuit memory | Avl | RFQ |
7610 | Intersil Corporation | microcircuit memory | Avl | RFQ |
DM54S387J833B | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
HM1-7610-2 | Intersil Corporation | microcircuit memory | Avl | RFQ |
MIL-M-38510 203 | Syntegra Usa Inc | microcircuit memory | Avl | RFQ |
MIL-M-38510 203 | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
MIL-M-38510 203 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
MM5300J | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
MM5300J | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
MM5300J | Mmi Amd | microcircuit memory | Avl | RFQ |
MM5300J | Syntegra Usa Inc | microcircuit memory | Avl | RFQ |
MM6300J | Syntegra Usa Inc | microcircuit memory | Avl | RFQ |
MM6300J | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
MM6300J | Mmi Amd | microcircuit memory | Avl | RFQ |
MM6300J | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
ROM PROM HEAD 021 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND W/OPEN COLLECTOR |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION |
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