NSN 5962-01-188-8742 Microcircuit Memory, Microcircuit Digital manufactured by Pro Face America Llc, Mmi Amd, Burndy Llc, Raytheon Company, Dla Land And Maritime is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 0N301216-1, 202567-101, 312396-003, 806925-2. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-188-8742 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-188-8742 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-188-8742 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: Pro Face America Llc , Mmi Amd , Burndy Llc , Raytheon Company , Dla Land And Maritime , Advanced Micro Devices Inc , National Semiconductor Corp , Texas Instruments Inc |
Pro Face America Llc | Mmi Amd | Burndy Llc |
Raytheon Company | Dla Land And Maritime | Advanced Micro Devices Inc |
National Semiconductor Corp | Texas Instruments Inc |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
0N301216-1 | Pro Face America Llc | microcircuit memory | Avl | RFQ |
0N301216-1 | Mmi Amd | microcircuit memory | Avl | RFQ |
202567-101 | Burndy Llc | microcircuit memory | Avl | RFQ |
312396-003 | Burndy Llc | microcircuit memory | Avl | RFQ |
806925-2 | Raytheon Company | microcircuit memory | Avl | RFQ |
808949-3 | Raytheon Company | microcircuit memory | Avl | RFQ |
8103603RB | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
8103603RX | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
8103609RX | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
90529-001 | Pro Face America Llc | microcircuit memory | Avl | RFQ |
90529-001 | Mmi Amd | microcircuit memory | Avl | RFQ |
AMPAL16R6A BRA | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
AMPAL16R6APC | Pro Face America Llc | microcircuit memory | Avl | RFQ |
AMPAL16R6APC | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
AMPAL16R6APC | Mmi Amd | microcircuit memory | Avl | RFQ |
DMPAL16R6AMJ 883 | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
JAN16R6AJ | Texas Instruments Inc | microcircuit memory | Avl | RFQ |
MIL-M-38510 504 | Pro Face America Llc | microcircuit memory | Avl | RFQ |
MIL-M-38510 504 | Mmi Amd | microcircuit digital | Avl | RFQ |
PAL16R6A | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
PAL16R6A | Mmi Amd | microcircuit memory | Avl | RFQ |
PAL16R6AJ 883 | National Semiconductor Corp | microcircuit memory | Avl | RFQ |
PAL16R6AMJ 883B | Mmi Amd | microcircuit memory | Avl | RFQ |
PAL16R6AMJB | Texas Instruments Inc | microcircuit memory | Avl | RFQ |
ROM PROM HEAD 047 | Pro Face America Llc | microcircuit memory | Avl | RFQ |
ROM PROM HEAD 047 | Mmi Amd | microcircuit memory | Avl | RFQ |
ROM PROM HEAD 047 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.290 INCHES MINIMUM AND 0.320 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES NOMINAL OUTPUT SINK |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 12.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/504 GOVERNMENT SPECIFICATION |
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