NSN 5962-01-197-8703 Microcircuit Memory manufactured by Burndy Llc, Inspektorat Wsparcia Sil Zbrojnych, Raytheon Company, Drs Sustainment Systems Inc, Cypress Semiconductor Corporation is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 312234-003, 5962PL0930421, AM2148-45 BVA. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-197-8703 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-197-8703 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-197-8703 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: Burndy Llc , Inspektorat Wsparcia Sil Zbrojnych , Raytheon Company , Drs Sustainment Systems Inc , Cypress Semiconductor Corporation , Advanced Micro Devices Inc , Synertek |
Burndy Llc | Inspektorat Wsparcia Sil Zbrojnych | Raytheon Company |
Drs Sustainment Systems Inc | Cypress Semiconductor Corporation | Advanced Micro Devices Inc |
Synertek |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
312234-003 | Burndy Llc | microcircuit memory | Avl | RFQ |
5962PL0930421 | Inspektorat Wsparcia Sil Zbrojnych | microcircuit memory | Avl | RFQ |
AM2148-45 BVA | Raytheon Company | microcircuit memory | Avl | RFQ |
AM2148-45 BVA | Drs Sustainment Systems Inc | microcircuit memory | Avl | RFQ |
AM2148-45 BVA | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
AM2148-45 BVA | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
AM2148-45DM-B | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
AM2148-55 BVA | Advanced Micro Devices Inc | microcircuit memory | Avl | RFQ |
CY2148-55DBM | Raytheon Company | microcircuit memory | Avl | RFQ |
CY2148-55DBM | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
CY2148-55DBM | Drs Sustainment Systems Inc | microcircuit memory | Avl | RFQ |
CY2148-55DMB | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
ES5455-02 | Raytheon Company | microcircuit memory | Avl | RFQ |
ES5455-02 | Drs Sustainment Systems Inc | microcircuit memory | Avl | RFQ |
ES5455-02 | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
G111397-1 | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
G111397-1 | Drs Sustainment Systems Inc | microcircuit memory | Avl | RFQ |
G111397-1 | Raytheon Company | microcircuit memory | Avl | RFQ |
G303488-103 | Raytheon Company | microcircuit memory | Avl | RFQ |
SYMC2148H-2 | Synertek | microcircuit memory | Avl | RFQ |
SYMC2148H-2 | Raytheon Company | microcircuit memory | Avl | RFQ |
SYMC2148H-2 | Drs Sustainment Systems Inc | microcircuit memory | Avl | RFQ |
SYMC2148H-2 | Cypress Semiconductor Corporation | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 960 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 185 INCHES NOMINAL |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1200 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-3 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | FEAT | SPECIAL FEATURESBIT QUANTITY 4096 WORD QUANTITY 1024 |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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