NSN 5962-01-288-6900 Microcircuit Memory manufactured by University Of Texas At Austin, Dla Land And Maritime, General Dynamics Information Systems, Hewlett Packard Co, Mmi Amd is available within ASAP Part Service’s ready-to-ship inventory. Owned and operated by ASAP Semiconductor, ASAP Part Services has over 6 billion parts within its inventory including 1816-0005, 351-8893-010. ASAP is committed to streamlining the parts procurement process for our customers. We make it easy for our customers to search through billions of parts to find the exact part they are looking for.
A dedicated ASAP account manager is ready to help solve any procurement issues or needs that a customer may have. As a company we are quick and responsive meaning we can deliver a part within an AOG timeframe. Quality control is at the center of all that we do. Each and every NSN 5962-01-288-6900 part is subject to numerous quality checks that are designed to screen out any part imperfections or validity issues. Subject a request for quote for NSN 5962-01-288-6900 part today and allow us to simplify your procurement process.
Alternative NSN: 5962-01-288-6900 |
Item Name:Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NCB Code: USA (01) |
Manufacturers: University Of Texas At Austin , Dla Land And Maritime , General Dynamics Information Systems , Hewlett Packard Co , Mmi Amd , Rockwell Collins Inc , Fairchild Semiconductor Corporation , Raytheon Company , Lansdale Semiconductor Inc , Intersil Corporation , Texas Instruments Inc |
Part No Part No
|
Manufacturer NSN Parts
|
Item Name Item Name
|
QTY QTY
|
RFQ RFQ
|
---|---|---|---|---|
1816-0005 | University Of Texas At Austin | microcircuit memory | Avl | RFQ |
1816-0005 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
1816-0005 | General Dynamics Information Systems | microcircuit memory | Avl | RFQ |
1816-0005 | Hewlett Packard Co | microcircuit memory | Avl | RFQ |
351-8893-010 | Mmi Amd | microcircuit memory | Avl | RFQ |
351-8893-010 | Rockwell Collins Inc | microcircuit memory | Avl | RFQ |
5201-1J | Mmi Amd | microcircuit memory | Avl | RFQ |
5301-1D 883B | Mmi Amd | microcircuit memory | Avl | RFQ |
5962-3820302BEA | General Dynamics Information Systems | microcircuit memory | Avl | RFQ |
5962-3820302BEA | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
5962-3820302BEA | University Of Texas At Austin | microcircuit memory | Avl | RFQ |
5962-3820302BEX | University Of Texas At Austin | microcircuit memory | Avl | RFQ |
5962-3820302BEX | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
5962-3820302BEX | General Dynamics Information Systems | microcircuit memory | Avl | RFQ |
69020700-04 | General Dynamics Information Systems | microcircuit memory | Avl | RFQ |
82S129N | Fairchild Semiconductor Corporation | microcircuit memory | Avl | RFQ |
ED1365-001 | University Of Texas At Austin | microcircuit memory | Avl | RFQ |
G267767-1 | Raytheon Company | microcircuit memory | Avl | RFQ |
HL7611 | Lansdale Semiconductor Inc | microcircuit memory | Avl | RFQ |
HL7611E1 | Lansdale Semiconductor Inc | microcircuit memory | Avl | RFQ |
HM1-7611-8 | Intersil Corporation | microcircuit memory | Avl | RFQ |
M38510 20302BEB | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
M38510 20302BEB | General Dynamics Information Systems | microcircuit memory | Avl | RFQ |
M38510 20302BEB | University Of Texas At Austin | microcircuit memory | Avl | RFQ |
M3851C 20302 BEB | University Of Texas At Austin | microcircuit memory | Avl | RFQ |
M3851C 20302 BEB | General Dynamics Information Systems | microcircuit memory | Avl | RFQ |
M3851C 20302 BEB | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
ROM PROM HEAD 005 | Dla Land And Maritime | microcircuit memory | Avl | RFQ |
TBP24S10N9 | Texas Instruments Inc | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | SCHOTTKY AND BIPOLAR AND PROGRAMMABLE AND MONOLITHIC |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION |
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